Confinement-induced Berry phase and helicity-dependent photocurrents

The photocurrent in an optically active metal is known to contain a component that switches sign with the helicity of the incident radiation. At low frequencies, this current depends on the orbital Berry phase of the Bloch electrons via the ``anomalous velocity'' of Karplus and Luttinger. We consider quantum wells in which the parent material, such as GaAs, is not optically active and the relevant Berry phase only arises as a result of quantum confinement. Using an envelope approximation that is supported by numerical tight-binding results, it is shown that the Berry phase contribution is determined for realistic wells by a cubic Berry phase intrinsic to the bulk material, the well width, and the well direction. These results for the magnitude of the Berry-phase effect suggest that it may already have been observed in quantum well experiments.