Studies on single-phase, indium-rich In1-xGaxN epilayers grown by high-pressure CVD
ORAL
Abstract
While significant progress in the growth of high quality group III-nitride epitaxial layers has been made during the last decades, the growth of indium rich InGaN epilayers at processing conditions compatible with wide band gap group III-nitrides is still very challenging, especially under low-pressure MOCVD growth conditions. Utilization of elevated pressures to stabilize the growth surface lead to elevated growth temperatures and opened a window for the growth of single-phase material with indium concentrations well above 30{\%}. We present growth conditions and results on structural quality and optical properties of single-phase indium-rich In$_{1-x}$Ga$_{x}$N epilayers. The layers were studied by X-ray diffraction, Raman spectroscopy, atomic force microscopy, optical absorption and IR reflectance spectroscopy, and photoluminescence spectroscopy.
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Authors
Max Buegler
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Mustafa Alevli
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Ramazan Atalay
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Goksel Durkaya
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Jielei Wang
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Indika Senevirathna
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Sampath Gamage
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
Nikolaus Dietz
Dept. of Physics and Astronomy, Georgia State University, Atlanta, GA
