Characterization of Soluble Anthradithiophene Derivatives

ORAL

Abstract

We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole mobility is shown to exceed 0.05 cm$^{2}$/Vs with on/off ratios of 10$^7$. F- TBDMS ADT is also observed to be readily soluble with films spun cast onto surface treated SiO$_2$ displaying a mobility $>$0.002 cm$^2$/Vs. These electrical measurements will be correlated with growth, morphology, and the performance of related F-ADT derivatives.

*This work is supported by the National Research Council Postdoctoral Fellowship at National Institute of Standards and Technology.

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Authors

  • Brad Conrad

    • National Institute of Standards and Technology

  • Calvin Chan

    • National Institute of Standards and Technology

  • M.A. Loth

    • University of Kentucky

  • John Anthony

    • University of Kentucky

  • David Gundlach

    • National Institute of Standards and Technology