Standard tunnel junctions for graphene spintronics

ORAL

Abstract

Graphene, whereas in sole or few layers, has aroused a considerable interest for spintronics. This is mainly due to its high mobility and long spin diffusion length expected up to room temperature. In line with the early results of spintronics, conventional tunneling barriers of MgO or alumina have been used in order to inject spins into the graphene/graphite layer up to now.We studied the influence of both spin dependent barriers on the exfoliated graphene properties. We will first present the results of a Raman study on the chemical compatibility of graphene with spin-dependant tunnel barrier (MgO, Al2O3). In the case of alumina, a 0.6nm Al film is deposited and then oxidized in pure O2. In the case of MgO, the sputtering is done directly from a MgO polycristaline target. This will be followed by a presentation of transport properties.

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Authors

  • Bruno Dlubak

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Pierre Seneor

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Abdel Madjid Anane

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • St\'epahne Fusil

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Karim Bouzehouane

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Cyrile Deranlot

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Bernard Servet

    • Thales Research and Technology, 91767 Palaiseau, France

  • St\'ephane Xavier

    • Thales Research and Technology, 91767 Palaiseau, France

  • Richard Mattana

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Fr\'ed\'eric Petroff

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France

  • Albert Fert

    • Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau, France and University of Paris-Sud 11, 91405 Orsay, France