Graphitic Switches

ORAL

Abstract

Four-probe dc current-voltage (I-V) characteristics were measured for 80-250 nm thick graphite samples with the lateral size ranging between $\sim $ 30 microns and 0.5 mm. All studied samples possess break junctions made by means of mechanical deformation or using focused ion beam (FIB). The measurements were performed in the temperature interval 2 K $\le $ T $\le $ 300 K and applied magnetic field up to 9 T. Nonlinear (I $\sim $ V$^{n}$, n $>$ 1) and hysteretic I-V curves were recorded even at T = 300 K. The results revealed the switching effect in I-V curves at applied current of a few microamps that could be reduced further by magnetic field. The results indicate that graphite is a promising material for switches that can be used in memory devices.

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Authors

  • J.C. Medina Pantoja

    • Instituto de F\'isica ``Gleb Wataghin,'' Universidade Estadual de Campinas, UNICAMP 13083-970, Campinas, S\~ao Paulo, Brasil

  • Robson R. da Silva

    • Instituto de F\'isica ``Gleb Wataghin,'' Universidade Estadual de Campinas, UNICAMP 13083-970, Campinas, S\~ao Paulo, Brasil

  • Yakov Kopelevich

    • Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA

  • Alex M. Bratkovsky

    • Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA