Nonlinear growth with the microwave intensity in the microwave radiation-induced magnetoresistance oscillations

ORAL

Abstract

We compare the characteristics of inverse-magnetic-field- periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared by W. Wegscheider et al., and V. Umansky, by fitting the observed lineshape vs. the radiation power, $P$, in the two MBE materials. We find that the radiation-induced oscillatory $\Delta R_{xx}$, in both materials, can be described by $\Delta R_{xx} = -A exp(-\lambda/B)sin(2 \pi F/B)$, where $A$ is the amplitude, $\lambda$ is the damping parameter, and $F$ is the oscillation frequency. Both $\lambda$ and $F$ turn out to be insensitive to $P$. On the other hand, $A$ grows nonlinearly with $P$.

*ARO W911NF-07001-0158, DOE DE-SC0001762

Authors

  • Ramesh G. Mani

    • Georgia State University
  • C. Gerl

    • University of Regensburg
  • S. Schmult

    • University of Regensburg, MPI-Stuttgart
  • W. Wegscheider

    • University of Regensburg, ETH-Zurich
  • V. Umansky

    • Weizmann Institute