Ferroelectric behavior of ultra-thin BiFeO$_{3}$ films

ORAL

Abstract

BiFeO$_{3}$ (BFO) is a potential oxide-barrier material for spintronics devices like magnetic tunnel junctions. Also, recent theoretical predictions have opened up the possibility of realizing multi-level devices with ferroelectric (FE) barriers. But understanding the FE properties of ultra-thin BFO films is at its early stages. Control over FE domains with robust polarization switching is a challenge and crucial for achieving any device-related objectives. In this work we have investigated the FE domains of BFO films of thickness between 5 - 100 nm using peizo-force microscopy (PFM) technique, and local properties using switching spectroscopy PFM (SS-PFM). Our films show significant polarization switching loops down to 5nm. We find domains to be irregular-shaped, in sharp contrast to thicker films. Detailed analysis shall be presented.

*Part of this research was conducted at ORNL's Center for Nanophase Materials Sciences, sponsored by the Division of Scientific User Facilities, U.S. DOE.

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Authors

  • Dipanjan Mazumdar

    • MINT Center, University of Alabama, Tuscaloosa, AL 35487

  • Vilas Shelke

    • MINT Center, University of Alabama, Tuscaloosa, AL, 35487

  • Arunava Gupta

    • MINT Center, University of Alabama, Tuscaloosa, AL, 35487

  • Sergei Kalinin

    • Oak Ridge National Laboratory
    • Oak Ridge National Laboratory, Oak Ridge, TN 37831
    • ORNL, Oak Ridge, TN

  • Stephen Jesse

    • Oak Ridge National Laboratory, Oak Ridge, TN 37831

  • Arthur Baddorf

    • Oak Ridge National Laboratory, Oak Ridge, TN 37831
    • Oak Ridge National Laboratory