Switching transition between bi-stable memory switching and mono-stable threshold switching based on ion migration in a NiO thin film

POSTER

Abstract

We have investigated a transition of resistive switching behaviors between bi-stable memory switching and mono-stable threshold switching in a NiO film, which was controllable by the polarity and width of applied electric pulse. Macroscopic model was proposed to explain the polarity- and width-dependence of electrical transition that provided experimental evidences for migration of oxygen ions (O2-) to be responsible for the filamentary resistive switching mechanism

Authors

  • In Rok Hwang

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Myung-Jae Lee

    • Samsung Advanced Institute of Technology, Korea

  • Gyoung-Ho Buh

    • Semiconductor Exam. Division, Korean Intellectural Property Office, Korea

  • Jin Sik Choi

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Jin-Soo Kim

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Sa Hwan Hong

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Sang Ho Jeon

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Yeon Soo Kim

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea

  • Ik Su Byun

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Seung-Woong Lee

    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk University, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Seung-Eon Ahn

    • Samsung Advanced Institute of Technology, Korea

  • Bo Soo Kang

    • Department of Applied Physics, Hanyang University, Korea

  • Sung-Oong Kang

    • Division of Quantum Phases \& Devices, Department of Physics, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.

  • Bae Ho Park

    • Division of Quantum Phases \& Devices, Department of Physics, Korea
    • Division of Quantum Phases \& Devices, Department of Physics, Konkuk Univ.