New Paradigms for Spintronics: Spin-Valve Effect in Single-Crystal Ruthenates

ORAL

Abstract

The spin valve effect is thought to be a delicate quantum phenomenon that depends upon precision deposition and nanoscale patterning of artificial thin-film heterostructures whose quality and performance are difficult to control. Here we demonstrate that a novel, strong spin valve effect exists in \textit{bulk} single-crystal ruthenates having an anisotropic, layered crystal structure [1]. This discovery opens new avenues to understand the underlying physics of spin valves, and fully realize its potential in practical devices. \\[4pt] [1] G. Caoet al., \textit{PRL}\textbf{100}, 016604 (2008)

*This work was supported by NSF through grants DMR-0552267, DMR-0856234 and EPS-0814194.

Authors

  • M. Ge

    • Center for Advanced Materials, University of Kentucky
  • S. Chikara

    • Center for Advanced Materials, University of Kentucky
  • O.B. Korneta

    • Center for Advanced Materials, University of Kentucky
  • T.F. Qi

    • Center for Advanced Materials, University of Kentucky
  • G. Cao

    • Center for Advanced Materials, University of Kentucky