Ferroelectric field effect transistors on silicon

The discovery of ferroelectricity in strained SrTiO$_3$ films grown directly on silicon substrates opens the possibility for a variety of devices that exploit direct field effects in this hybrid system. We report the fabrication and characterization of ferroelectric field effect transistors (FeFET) formed by coherently strained SrTiO$_3$ grown on silicon-on-insulator substrates. We observe persistent channel conductance changes of 85\% at large gate bias voltages. A preference for one polarization state is also observed, consistent with a predicted\footnote{M. P. Warusawithana et al., Science \textbf{324},367 (2009).} permanent interface dipole at the SrTiO$_3$/silicon interface.