Ab initio study of hot carrier lifetime in graphene and bilayer graphene

ORAL

Abstract

The lifetime of charge carriers through inelastic scattering processes determines transport properties of electronic devices operating at a high source-drain bias voltage at which the inelastic carrier mean free path is much shorter than the elastic one. Therefore, knowing the carrier lifetime arising from inelastic scattering processes is an important step towards the electronic device applications. We present a first-principles calculation of the carrier lifetime in graphene and bilayer graphene considering both electron-electron and electron-phonon interactions. We also compare our calculated results with recent ultrafast pump-probe optical and angle-resolved photoemission spectroscopy measurements on graphene. The results from these two kinds of experiments appear to contradict with each other.

*This work was supported by the NSF under Grant No. DMR07-05941, and the U.S. DOE under Contract No. DE-AC02-05CH11231. Computer time was provided by NERSC and NPACI.

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Authors

  • Cheol-Hwan Park

    • UC Berkeley
    • Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
    • UC Berkeley and Lawrence Berkeley National Lab

  • Feliciano Giustino

    • University of Oxford

  • Catalin D. Spataru

    • Sandia National Laboratories

  • Marvin L. Cohen

    • UC Berkeley and Lawrence Berkeley National Laboratory
    • Department of Physics, University of California, Berkeley. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California
    • UC Berkeley
    • Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
    • Department of Physics, University of California, Berkeley; Material Science Division, Lawrence Berkeley National Laboratory
    • Deptartment of Physics, University of California, Berkeley; Materials Science Division, Lawrence Berkeley National Laboratory
    • Department of Physics, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory
    • Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720

  • Steven G. Louie

    • UC Berkeley and Lawrence Berkeley National Laboratory
    • Department of Physics, University of California, Berkeley. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California
    • University of California at Berkeley and Lawrence Berkeley National Lab
    • University of California at Berkeley and Lawrence Berkeley National Laboratory
    • University of California, Berkeley and Lawrence Berkeley National Laboratory
    • UC Berkeley
    • Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
    • UC Berkeley and Lawrence Berkeley National Lab
    • UC Berkeley and LBNL
    • Department of Physics, University of California, Berkeley, and Materials Science Division, Lawrence Berkeley National Laboratory
    • Dept. of Physics, University of California Berkeley and The Molecular Foundry, LBNL
    • Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720