Reversible Resistive Switching in (La,Pr,Ca)MnO$_{3}$; Cryogenic nonvolatile RAM

ORAL

Abstract

Cryogenic-temperature electronics technologies are a practical promise for continuing demand for high performance electronics. By utilizing the unique hysteretic behavior of perovskite (La,Pr,Ca)MnO$_{3}$ in the variation of temperature and applied electric fields, we have discovered that two electronically-distinct phases, with a huge difference in resistance ($>$10$^{5})$, can be repeatedly switched by applying various voltage pulses at cryogenic temperatures (e.g., 2 K), and the magnitude of resistance of each phase is highly stable with time. A multilevel memory effect for storing multiple bits was also found. We believe that the non-volatile cryo-PRAM utilizing our findings is an excellent candidate for memory devices for low-temperature electronic technologies such as quantum computers, Superconducting Rapid Single Flux Quantum (RSFQ) technology, low temperature detectors.

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Authors

  • H.T. Yi

    • Department of Electrical and Computer Engineering, Rutgers University
    • Rutgers University
    • Rutgers Center for Emergent Materials \& Department of Physics and Astronomy, Rutgers University

  • T. Choi

    • Department of Physics, Rutgers University
    • Rutgers University
    • Rutgers Center for Emergent Materials \& Department of Physics and Astronomy, Rutgers University

  • S.-W. Cheong

    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854
    • Rutgers Center for Emergent Materials
    • Rutgers University
    • Department of Physics, Rutgers Univeristy
    • Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ, 08854, USA
    • Rutgers Center for Emergent Materials \& Department of Physics and Astronomy, Rutgers University