Giant tunneling magnetoresistance in organic spin valves

Using buffer layer assist growth, we have successfully fabricated vertical organic spin valves with much sharper interface between top electrode and organic material. Organic spin valves prepared by this method maintain a simple and clean trilayer structure, allowing us to study the mechanism of the MR. Analysis of the current-voltage characteristics at different spacer layer thicknesses indicates that the spin-dependent carrier injection correlates strongly with the observed MR.