Focus Session: Dielectric, Ferroelectric, and Piezoelectric Oxides -- Applications
FOCUS · L24 ·
Presentations
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Ferroelectric Tunnel Junctions: Resistive Switching Behavior by Scanning Probe Microscopy
ORAL
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Authors
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A. Stamm
- University of Nebraska-Lincoln
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H. Lu
- University of Nebraska-Lincoln
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D. Wu
- Duke University
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Y. Wang
- University of Nebraska-Lincoln
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D. Felker
- University of Wisconsin-Madison
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M. Rzchowski
- University of Wisconsin-Madison
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H. W. Jang
- University of Wisconsin-Madison
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C. W. Bark
- University of Wisconsin-Madison
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C.-B. Eom
- University of Wisconsin-Madison
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E. Y. Tsymbal
- University of Nebraska-Lincoln
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A. Gruverman
- University of Nebraska-Lincoln
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Mechanism for bipolar resistive switching in transition metal oxides
ORAL
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Authors
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Marcelo Rozenberg
- CNRS - Laboratoire de Physique des Solides, Universite Paris Sud, Orsay, France
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Maria Jose Sanchez
- CNEA - Centro Atomico Bariloche, Bariloche, Argentina
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Ruben Weht
- CNEA - Instituto Sabato, Buenos Aires, Argentina
- CNEA, Buenos Aires, Argentina
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Carlos Acha
- Departamento de Fisica, FCEN, Universidad de Buenos Aires, Argentina
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Fernando Gomez-Marlasca
- CNEA - Buenos Aires, Argentina
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Pablo Levy
- CNEA - Buenos Aires, Argentina
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Tunneling Electroresistance in Ferroelectric Tunnel Junctions with a Composite Barrier
ORAL
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Authors
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M. Y. Zhuravlev
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Y. Wang
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E. Y. Tsymbal
- Department of Physics and Astronomy, University of Nebraska-Lincoln
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S. Maekawa
- Institute for Materials Research, Tohoku University
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An assessment of memristor intrinsic fluctuations: a measurement of single atomic motion
ORAL
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Authors
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Julien Borghetti
- Hewlett Packard Laboratories
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J. Joshua Yang
- Hewlett-Packard Labs
- Hewlett Packard Laboratories
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Gilberto Medeiros-Ribeiro
- Hewlett-Packard Labs
- Hewlett Packard Laboratories
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R. Stanley Williams
- Hewlett-Packard Labs
- Hewlett Packard Laboratories
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Interfacial engineering and mechanism of metal oxide memristive switching
ORAL
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Authors
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Hongwu Zhao
- Institute of Physics, Chinese Academy of Sciences
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Zhaoliang Liao
- Institute of Physics, Chinese Academy of Sciences
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Ziyu Liu
- Institute of Physics, Chinese Academy of Sciences
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Yang Meng
- Institute of Physics, Chinese Academy of Sciences
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Dongmin Chen
- Institute of Physics, Chinese Academy of Sciences
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Resistive Switching in ALD ZnO and TiO2 Films
ORAL
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Authors
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Todd Waggoner
- Oregon State University
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John Conley
- Oregon State University
- School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR-97331
- School of Electrical and Computer Science, Dept. of Material Science, Oregon State University, Corvallis OR
- School of EECS, Oregon State University, Corvallis, OR
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Lead-free piezoelectrics and mechanisms of high electro-mechanical coupling
COFFEE_KLATCH · Invited
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Authors
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Dragan Damjanovic
- EPFL, Lausanne
- EPFL
- Swiss Federal Institute of Technology - EPFL
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Atomic Layer Deposited Ta$_{2}$O$_{5}$/Al$_{2}$O$_{3}$, ZrO$_{2}$/Al$_{2}$O$_{3}$ and ZrO$_{2}$/Ta$_{2}$O$_{5}$ as Dual Dielectric MIIM Diodes for Rectenna Applications
ORAL
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Authors
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Nasir Alimardani
- School of EECS, Oregon State University, Corvallis, OR
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John Conley
- Oregon State University
- School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR-97331
- School of Electrical and Computer Science, Dept. of Material Science, Oregon State University, Corvallis OR
- School of EECS, Oregon State University, Corvallis, OR
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Stephen Kilpatrick
- U.S Army Research Laboratory, Adelphi, MD
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Madan Dubey
- U.S Army Research Laboratory, Adelphi, MD
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Electronic States of Hafnium and Vanadium oxide in Silicon Gate Stack Structure
ORAL
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Authors
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Chiyu Zhu
- Arizona State University
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Fu Tang
- Arizona State University
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Xin Liu
- Arizona State University
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Jialing Yang
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Robert Nemanich
- Arizona State University
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ABSTRACT WITHDRAWN
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Atomic Layer Deposited Aluminum Oxide / Tantalum Oxide Laminate Films
ORAL
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Authors
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Sean W. Smith
- School of Electrical and Computer Science, Dept. of Material Science, Oregon State University, Corvallis OR
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John Conley
- Oregon State University
- School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR-97331
- School of Electrical and Computer Science, Dept. of Material Science, Oregon State University, Corvallis OR
- School of EECS, Oregon State University, Corvallis, OR
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Electrical Properties of MOOM Junctions Fabricated by Electrochemical Anodization
ORAL
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Authors
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Wenbin Fan
- University of Virginia
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Jiwei Lu
- University of Virginia
- Department of Materials Science and Engineering, University of Virginia
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Stuart Wolf
- University of Virginia
- Department of Materials Science and Engineering, University of Virginia
- U of Virginia
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Annealing temperature dependence of optical properties of SrTiO$_{3}$/BaTiO$_{3}$ multilayered films on indium tin oxide
ORAL
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Authors
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Satreerat Hodak
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330 Thailand
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Thidarat Supasai
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330 Thailand
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Somsak Dangtip
- Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
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Punyachai Learngarunsri
- Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
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Narong Boonyopakorn
- Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400, Thailand
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Anurat Wisitsoraat
- Nanoelectronics and MEMS Laboratory, National Electronics and Computer Technology Center, Pathumthani, 12120 Thailand
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