High yield assembly and transport properties of semiconducting carbon nanotubes
POSTER
Abstract
AC-dielectrophoresis (DEP) typically yields a low percentage of semiconducting single-walled nanotube (SWNT) devices due to the greater force metallic SWNTs feel during the trapping process. Here we show that DEP combined with a commercially available semiconducting enriched solution allows for the large scale assembly of SWNT field effect transistors (FETs) from solution. Individual or small bundle SWNTs we assembled between 1 um spaced Pd source and drain electrodes using DEP. We observed FET behavior in 87{\%} of the as-assembled devices using this fabrication method. After annealing in Ar/H$_{2}$ gas, the devices displayed mobilities up to 463 cm$^{2}$/Vs and current on-off ratios as large as 4x10$^{5}$. We will present scanning electron micrographs, full electronic characteristics, and statistics on the FET devices.
*This work is partially supported by NSF-CARRER award ECS-0748091.