Observation of glassy dynamics in high quality GaAs two-dimensional hole systems using transport and RF reflectometry

ORAL

Abstract

We have used standard low frequency ac transport measurements, as well as large bandwidth rf reflectometry measurements, to study the non-equilibrium relaxation of the resistance of strongly interacting, high quality 2D GaAs hole systems at milliKelvin temperatures. We observe logarithmic relaxation of the resistance over 7 orders of magnitude in time (from 1ms to 10,000s) following a discontinuous step in the gate voltage. This is characteristic of glassy behaviour, and may be evidence for the formation of a Coulomb glass. A comparison of the logarithmic behaviour observed in different samples provides clues as to the origins of these slow glassy dynamics.

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Authors

  • M. Pepper

    • University of Cambridge, UK

  • A.R. Hamilton

    • University of New South Wales, Australia

  • L.J. Taskinen

    • University of New South Wales, Australia

  • A.P. Micolich

    • University of New South Wales, Australia

  • M.Y. Simmons

    • University of New South Wales, Australia

  • D.A. Ritchie

    • University of Cambridge, UK