A Three terminal spin-torque driven magnetic switch

COFFEE_KLATCH  · Invited

Abstract

A three-terminal spin-torque-driven magnetic switch is experimentally demonstrated. The device uses non-local spin-current and spin-accumulation as the main mechanism for current-driven magnetic switching. It separates the current-induced write operation from that of a magnetic tunnel junction based read. The write current only passes through metallic structures, improving device reliability. The device structure makes efficient use of lithography capabilities, important for robust process integration. I will give a review of the basic device structure and its characterstic transport properties.

*IBM-MagIC MRAM Alliance, IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598

Authors

  • Jonathan Sun

    • IBM T.J Watson Research Center
    • IBM T. J. Watson Research Center