Insulating Behavior in Graphene with Irradiation-induced Lattice Defects

ORAL

Abstract

We irradiated cleaned graphene on silicon dioxide in ultra-high vacuum with low energy inert gas ions to produce lattice defects [1], and investigated in detail the transition from metallic to insulating temperature dependence of the conductivity as a function of defect density. We measured the low field magnetoresistance and temperature-dependent resistivity \textit{in situ} and find that weak localization can only account for a small correction of the resistivity increase with decreasing temperature. We will discuss possible origins of the insulating temperature dependent resistivity in defected graphene in light of our recent experiments. \\[4pt] [1] Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, \textit{PRL} \textbf{102}, 236805 (2009)

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Authors

  • Jian-Hao Chen

    • Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20740

  • Ellen Williams

    • Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20740

  • Michael Fuhrer

    • Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20740