Low frequency noise in graphene

ORAL

Abstract

Low frequency, 1/f noise is a poorly understood, commonly occurring phenomenon that is important for sensor technology. Hooge's empirical law describes 1/f noise in an overwhelming number of materials. We have measured 1/f noise in four probe configuration graphene transistors at temperatures ranging from 4 to 300 K. The power spectral density as a function of frequency is found to vary as a function of temperature and gate voltage. Measured 1/f noise will be discussed in terms of Hooge's law and alternative models.

*Work supported by the Center for Nanophysics and Advanced Materials, Dept. of Physics, University of Maryland, and the Laboratory for Physical Science, College Park, MD

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Authors

  • Tracy Moore

    • University of Maryland, College Park

  • David Tobias

    • University of Maryland, College Park

  • Liang Li

    • University of Maryland, College Park

  • Vinod Sangwan

  • Michael Fuhrer

    • University of Maryland, College Park

  • Ellen Williams

    • University of Maryland, College Park