Magnetoresistivity of V$_{3}$Si single crystal: Deviations from K\"{o}hler's Rule and details of the Martensitic transformation

The effect of the Martensitic transformation on the field dependence of the normal-state transport magnetoresistivity \textit{$\rho $(H) }in high-quality samples of A15 compound V$_{3}$Si is studied, in the context of the traditional Kohler's Rule, \textit{$\Delta \rho $/$\rho $}$_{0 }$\textit{= f(H/$\rho $}$_{0}$\textit{) = A(H/$\rho $}$_{0})^{b}, $where $A $and $b$ are constants. Contrary to the results of a previous study by Zotos \textit{et al. }on polycrystalline samples (\textit{Sol. State Comm. }\textbf{50 }(5), 1984, p. 453) which found that \textit{b $\sim $ }1.7 in the vicinity of the Martensitic transformation temperature $T_{m}$, the current study on a single crystal finds \textit{two} regimes for $b $on either side of \textit{H/$\rho $}$_{0} \quad \sim $ 0.3 T/($\mu \Omega $cm): For lower fields, \textit{b $\sim $ }0.8; while \textit{b $\sim $ }1.4 for higher fields up to 9 T. There is also indication of a sharp deviation in a very small window around $T_{m}$. These results could reveal more details about the Martensitic transformation, including the possible role of strain fields, as will be discussed.