Magneto-transport properties of boron-incorporated Si-based nanostructures

ORAL

Abstract

Boron-incorporated Mn$_{5}$SiC nanowires were grown using chemical vapor deposition. Cluster of these nanowires exhibit magnetic hysteresis loops at room temperature and the strength of the magnetic behavior depend on the concentration of the boron incorporation. In the presence of an external magnetic field, Mn$_{5}$SiC nanowire-based devices exhibit tunable spin dependent transport properties. Huge magnetoresistance and metallic behavior were observed in lightly boron-incorporated nanowires, on the other hand, low magnetoresistance and semiconducting behavior were observed with higher boron content in Mn$_{5}$SiC nanostructures.

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Authors

  • Donald Heiman

    • Northeastern University

  • Sungmu Kang

    • The Catholic University of America
    • The Vitreous State Laboratory, The Catholic University of America

  • Jugdersuren Battogtokh

    • The Catholic University of America

  • Andrew C. Buechele

    • The Catholic University of America

  • David A. McKeown

    • The Catholic University of America

  • Robert DiPietro

    • Northeastern University

  • Ian L. Pegg

    • The Catholic University of America

  • John Philip

    • The Catholic University of America