Si/SiGe Quantum Dot with SET Charge Sensor

ORAL

Abstract

Si/SiGe quantum dots promise a long spin coherence time due to reduced electron-nuclear spin interaction. Based on robust fabrication process we have developed, reliable ohmic contacts and non-leaky Schottky gates are repeatedly produced. As a result, stable quantum dots have been successfully formed, with sufficiently high yield to allow subsequent fabrication steps. Representative Coulomb blockade data will be shown. Efforts to couple a single electron transistor (SET) to a Si/SiGe dot in order to monitor its charge state are in progress. Recent experimental results will be discussed.

*This research was supported by the NSA, LPS and ARO under Agreement No. W911NF-08-1-0482

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Authors

  • Mingyun Yuan

    • Department of Physics and Astronomy, Dartmouth College

  • Zhen Yang

    • Department of Physics and Astronomy, Dartmouth College

  • A. J. Rimberg

    • Dartmouth College
    • Department of Physics and Astronomy, Dartmouth College

  • M. A. Eriksson

    • University of Wisconsin Madison
    • University of Wisconsin-Madison
    • Department of Physics, University of Wisconsin-Madison
    • University of Wisconsin - Madison

  • D. E. Savage

    • Material Science Center, University of Wisconsin-Madison