Physical mechanisms for interface-mediated intervalley coupling in Si
ORAL
Abstract
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.
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Authors
Andre Saraiva
UFRJ / Univ. of Wisconsin
Maria Calderon
Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)
Instituto de Ciencia de Materiales de Madrid (CSIC)
Xuedong Hu
University at Buffalo
Department of Physics, University of Buffalo, SUNY
Department of Physics, University at Buffalo, The State University of New York
Department of Physics, University at Buffalo, SUNY, Buffalo, NY 14260-1500
University at Buffalo, SUNY
SUNY at Buffalo
Department of Physics, University at Buffalo, the State University of New York
S. Das Sarma
University of Maryland
Condensed Matter Theory Center and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park
Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, MD 20742
Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland, USA
University of Maryland, College Park
University of Maryland-College Park
Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park MD 20742-4111
Univ. of Maryland
University of Maryland, College Park, Maryland, USA
Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111
