Focus Session: Dopants and Defects in Semiconductors - Nitrides, SiC

Presentations

• Electrical properties of point and extended defects in indium nitride

  COFFEE_KLATCH · Invited

  March 15, 2010, 2:30 PM – March 15, 2010, 3:06 PM

  Authors

  • Joel W. Ager III

    • Materials Sciences Division - Berkeley National Lab
    • Lawrence Berkeley National Laboratory

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• Optical Properties of GaN/ZnO solid solutions studied by Density Functional Calculations

  ORAL

  March 15, 2010, 3:06 PM – March 15, 2010, 3:18 PM

  Authors

  • Li Li

    • State University of New York at Stony Brook

  • P. B. Allen

    • State University of New York at Stony Brook

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• ABSTRACT WITHDRAWN

  March 15, 2010, 3:18 PM – March 15, 2010, 3:30 PM

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• Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

  ORAL

  March 15, 2010, 3:30 PM – March 15, 2010, 3:42 PM

  Authors

  • Yevgeniy Puzyrev

    • Vanderbilt University
    • Department of Physics and Astronomy, Vanderbilt University

  • Blair Tuttle

    • Penn State Behrend
    • Department of Physics, Penn State Behrend College

  • Ronald Schrimpf

    • Vanderbilt University
    • Department of Electrical Engineering and Computer Science, Vanderbilt University

  • Daniel Fleetwood

    • Vanderbilt University
    • Department of Electrical Engineering and Computer Science, Vanderbilt University

  • Sokrates Pantelides

    • Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
    • Vanderbilt University, Oak Ridge National Laboratory
    • Vanderbilt Univ.
    • Department of Physics and Astronomy, Vanderbilt University
    • Vanderbilt University

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• Stress-assisted migration of vacancies in GaN HEMTs

  ORAL

  March 15, 2010, 3:42 PM – March 15, 2010, 3:54 PM

  Authors

  • Keith Warnick

    • Vanderbilt University

  • Yevgeniy Puzyrev

    • Vanderbilt University

  • Sokrates Pantelides

    • Vanderbilt University

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• Mg-related EPR signal in high hole density GaN

  ORAL

  March 15, 2010, 3:54 PM – March 15, 2010, 4:06 PM

  Authors

  • Mary Ellen Zvanut

    • University of Alabama at Birmingham

  • Jamiyana Dashdorj

    • University of Alabama at Birmingham

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• Gate Bias Dependent Two Layer Conduction in InAlN/AlN/GaN Heterostructures

  ORAL

  March 15, 2010, 4:06 PM – March 15, 2010, 4:18 PM

  Authors

  • Hailing Cheng

    • University of Michigan

  • Cagliyan Kurdak

    • Physcis, University of Michigan

  • Jacob Leach

  • Xianfeng Ni

  • Xing Li

  • Mo Wu

  • Umit Ozgur

  • Hadis Morkoc

    • ECE, Virginia Commonwealth University

  • Lin Zhou

  • David Smith

    • Physics, Arisona State University

  • Igor Vurgaftman

  • Jerry Meyer

    • Naval Research Laboratory

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• Structure and defects at the SiC:SiO$_{2}$ interface

  ORAL

  March 15, 2010, 4:18 PM – March 15, 2010, 4:30 PM

  Authors

  • Blair Tuttle

    • Penn State Behrend
    • Department of Physics, Penn State Behrend College

  • Sokrates Pantelides

    • Vanderbilt University

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• Carbon-Rich Silicon Carbide

  ORAL

  March 15, 2010, 4:30 PM – March 15, 2010, 4:42 PM

  Authors

  • Xiao Shen

    • Vanderbilt University

  • Yevgeniy Puzyrev

    • Vanderbilt University

  • Gerd Duscher

    • University of Tennessee-Knoxville

  • Sokrates Pantelides

    • Vanderbilt University

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• Carbon defects at the SiC-SiO$_{2}$ interface and the effects of hydrogen and fluorine

  ORAL

  March 15, 2010, 4:42 PM – March 15, 2010, 4:54 PM

  Authors

  • Yingdi Liu

    • The University of Tulsa

  • Michael Halfmoon

    • The University of Tulsa

  • Sanwu Wang

    • The University of Tulsa

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• Strong hot electron reflection from subsurface 8H-SiC inclusion in 4H-SiC: Ballistic Electron Emission Microscopy (BEEM) study

  ORAL

  March 15, 2010, 4:54 PM – March 15, 2010, 5:06 PM

  Authors

  • K.-B. Park

    • Ulsan National Institute of Science and Technology, Korea

  • W. Cai

    • The Ohio State University

  • J.P. Pelz

    • The Ohio State Univ.
    • The Ohio State University

  • M.S. Miao

    • Case Western Reserve University

  • W.R.L. Lambrecht

    • Case Western Reserve University

  • X. Zhang

    • Carnegie Mellon University

  • M. Skowronski

    • Carnegie Mellon University

  • M.A. Capano

    • Purdue University

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• First principles study of p-type conductivity in wide band gap Cu$_3$TaQ$_4$ (Q=S,Se,Te) semiconductors

  ORAL

  March 15, 2010, 5:06 PM – March 15, 2010, 5:18 PM

  Authors

  • F.L. Barras

    • Oregon State University

  • Andriy Zakutayev

    • Department of Physics, Oregon State University
    • Oregon State University
    • Department of Physics, Oregon State University, USA

  • Guenter Schneider

    • Oregon State University

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• Origin of p-type conductivity in wide band gap BaCuQF (Q=S,Se,Te) semiconductors

  ORAL

  March 15, 2010, 5:18 PM – March 15, 2010, 5:30 PM

  Authors

  • Guenter Schneider

    • Oregon State University

  • Andriy Zakutayev

    • Department of Physics, Oregon State University
    • Oregon State University
    • Department of Physics, Oregon State University, USA

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