Transport properties of MBE grown LaAlO$_{3}$/SrTiO$_{3}$ interfaces and the effect of stoichiometry

ORAL

Abstract

We report on electronic transport properties on MBE grown LaAlO$_{3}$/SrTiO$_{3}$ 2-dimensional electron gas samples measured at cryogenic temperatures in perpendicular magnetic fields. We find that the electronic properties of this system are strongly dependent on the stoichiometry of the LaAlO$_{3}$ layer: A 2-dimensional electron gas is observed only when the La/Al ratio is less than 1. Hall measurements at low-temperatures reveal that the mobility and the carrier concentration in these samples are $\sim $250 cm$^{2}$V$^{-1}$s$^{-1}$ and 10$^{13}$cm$^{-2}$ respectively. The 2-dimensional electron gas superconducts at around 200 mK. We will discuss how the low-temperature electronic properties of this oxide-oxide interface are affected by the LaAlO$_{3}$ stoichiometry.

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Authors

  • A.A. Pawlicki

    • Department of Physics and NHMFL, Florida State University

  • M.P. Warusawithana

    • Department of Physics and NHMFL, Florida State University

  • T. Heeg

    • Department of Materials Science and Engineering, Cornell University

  • D.G. Schlom

    • Department of Materials Science and Engineering, Cornell University

  • C. Richter

    • Experimentalphysik VI, University of Augsburg

  • S. Paetel

    • Experimentalphysik VI, University of Augsburg

  • J. Mannhart

    • Experimentalphysik VI, University of Augsburg

  • M. Zheng

    • Department of Physics, University of Illinois at Urbana-Champaign

  • B. Mulcahy

    • Department of Physics, University of Illinois at Urbana-Champaign

  • J.N. Eckstein

    • Department of Physics, University of Illinois at Urbana-Champaign

  • W. Zander

    • Inst. of Bio and Nanosystems IBN1-IT and JARA-FIT, Research Centre J\"ulich

  • J. Schubert

    • Inst. of Bio and Nanosystems IBN1-IT and JARA-FIT, Research Centre J\"ulich