Measurement of the Spin Relaxation Time T$_{1}$ of Single Electrons in a Silicon MOS-Based Quantum Dot
ORAL
Abstract
Spin relaxation time T$_{1}$ is an important measure of the interaction between a two-level quantum system and its environment. Measurement of T$_{1}$ for individual electrons in silicon based quantum dots has been long awaited. In this talk, we present such a measurement in an electrostatically-confined quantum dot (QD) on Si MOS based materials. Excited-state spectroscopy of the QD was performed using a charge sensing technique for identifying energy levels. T$_{1}$ was subsequently measured in the time-domain with a pump-and-probe method. We measured T$_{1}$ for spin-flip transitions between two magnetic field induced Zeeman sublevels and between singlet-triplet states, for an odd and even number of electrons respectively. For the QD that contains an unpaired spin, we found that T$_{1}$ depended strongly on the applied field. Possible mechanisms leading to the observed spin relaxation will be discussed.
*The work is sponsored by U.S. Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government.
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