Two Dimensional Electron Gas Formed at Inverted SrTiO3-LaAlO3 Interface
ORAL
Abstract
We have grown and tested inverted 2DEG structures consisting of SrTiO3 layers grown on top of thick LaAlO3 films. By engineering the layering, the interface can be made n-type. Contact to the 2DEG is relatively easy in this geometry since the current does not have to pass through the high band gap LAO layer. We have obtained a 2-D carrier density of 2x10\^{}14 electrons/cm\^{}2 at room temperature along with a mobility of 10 cm\^{}2/Vs.
*This work was supported by the DOE BES at the F. Seitz Materials Research Laboratory at the University of Illinois, Urbana.
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