Cyclotron Resonance of Two-Dimensional Hole Systems in InSb Quantum Wells

In order to realize high-performance InSb CMOS circuits, p-type InSb QW transistors with a high room-temperature mobility are necessary. We report on an experimental study of cyclotron resonance in InSb QWs with Al$_{0.20}$In$_{0.80}$Sb barriers doped with Be. Magnetic fields up to 17.5T were applied perpendicular to the QWs, at a temperature of 4.2K. At fields less than 4T, we deduce a hole effective mass of 0.05$\sim $0.1m$_{o}$ for densities of 2$\sim $5$\times $10$^{11}$cm$^{-2}$, which suggests that high hole mobilities are possible. At higher fields, we observe separate features for different spin-conserving transitions between neighboring Landau levels. The energies of the features depend on the levels' spin index and Landau level indices. The energies and intensities are explained by a modified Pidgeon-Brown model that explicitly incorporates pseudomorphic mechanical strain. This work was supported by the NSF under Grants DMR-0808086 and DMR-0520550.