Upper critical field study of CH$_{4}$ HPCVD carbon-doped MgB$_{2}$
ORAL
Abstract
The $H_{c2}(T)$ of a set of four carbon-doped MgB$_{2}$ films grown on both SiC and Al$_{2}$O$_{3 }$substrates by HPCVD from methane CH$_{4}$ at flow rates from 7 to 10 sccm were measured in fields up to 65T. Compared to early metalorganic C sources which generated high $H_{c2}(0)$, these films have much lower resistivities and higher connectivities. The curvature of $H_{c2}(T)$ derived from low current four point magnetoresistance shows upturn at low temperatures, which is consistent with the dominance of \textit{$\pi $}-band scattering in the theory of dirty two-gap superconductivity. $H_{c2}^{\vert }$(0) $>$ 60T is close to the paramagnetic limit of $\sim $ 66T for the 10 sccm film on SiC, though still a little lower than for the previously used metalorganic (C$_{6}$H$_{7})_{2}$Mg. Differences in the $H_{c2}(T)$ behavior between films grown on the two substrates are attributed to variations in strain fields produced by the substrate coupled to the film at growth.
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