Transition metal-doped Sb$_{2}$Te$_{3}$ magnetic semiconductor thin films.

With the doping of vanadium in tetradymite-based Sb$_{2}$Te$_{3}$, magnetic semiconductor thin films Sb$_{2-x}$V$_{x}$Te$_{3}$ have been prepared on (0001) sapphire substrates by low-temperature molecular beam epitaxy. X-ray diffraction measurements and RHEED patterns confirm single crystalline films growing along the c-axis direction. Magnetic and anomalous Hall measurements clearly show stable ferromagnetic ordering with the easy axis along c-axis direction up to Curie temperature, which increases nearly linearly with the content of V incorporated in the lattice. So far, a high Curie temperature of 213 K has been achieved for the composition of Sb$_{1.55}$V$_{0.45}$Te$_{3}$.