Accumulation-Mode Quantum-Dot Devices

We have developed a quantum-dot device based on a double-well heterostructure in which electrons are localized in the top, mostly empty well by forward biasing a small circular gate. Charge occupancy changes in the dot are monitored by measuring current confined to a narrow channel in the bottom well. In this design, dot occupancy is primarily controlled by a single gate and interacting dots can be straightforwardly fabricated. We have successfully fabricated and characterized single-dot devices of this design in AlGaAs/InGaAs, and are extending the design to SiGe/Si heterostructures. We have measured charging spectra of III-V versions of the device down to zero electron occupancy. Charging spectra show enhanced stability for n=2, 6, 12, and 20 electrons. We have measured the tunneling times as a function of bias to map out excited states of a two-electron dot.