Growth and Characterization of EuTiO$_{3}$ films on SrTiO$_{3}$ (001)

ORAL

Abstract

Perovskite oxides display a variety of interesting physical properties, and their heteroepitaxial structures are of significant interest in oxide electronics. EuTiO$_{3 }$and SrTiO$_{3}$ are nearly perfectly lattice matched and have the same valence structure, and are therefore well suited as a model system for the study of perovskite interfaces. One outstanding question about such interfaces concerns the factors that determine and limit atomic and electronic abruptness. In this work, several monolayer thick EuTiO$_{3}$ films are grown on single-crystal SrTiO$_{3}$ (001) substrates using Pulsed Laser Deposition (PLD). The growth mechanisms are probed by the combination of synchrotron based \textit{in situ }small angle x-ray scattering (SAXS) and \textit{in situ} Reflection High Energy Electron Diffraction (RHEED). The atomic-scale interfacial properties are investigated by high resolution Scanning Transmission Electron Microscopy (STEM) and spatially resolved Electron Energy Loss Spectroscopy (EELS).

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Authors

  • H. Q. Wang

    • School of Applied and Engineering Physics, and Cornell Center for Materials Research (CCMR)

  • J. D. Ferguson

    • Department of Materials Science and Engineering, and CCMR

  • A. R. Woll

    • School of Applied and Engineering Physics, and Cornell High Energy Synchrotron Source

  • David Muller

    • School of Applied and Engineering Physics, and CCMR
    • Dept. of Applied and Engineering Physics, Cornell University

  • J. D. Brock

    • School of Applied and Engineering Physics, and CCMR, Cornell University, Ithaca, New York, USA