Electric Field Induced Sub-Microsecond Resistive Switching

ORAL

Abstract

Electric field induced resistive switching in metal-oxide interfaces has attracted extensive recent interest. While many agree that lattice defects play a key role, details of the physical processes are far from clear. There is debate, for example, regarding whether the electromigration of pre-existing point defects or the field-created larger lattice-defects dominates the switch. We investigate several Ag-Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ (PCMO) samples exhibiting either sub-microsecond fast switching or slow quasistatic DC switching. It is found that the carrier trapping potentials are very different for the pre-existing point defects associated with doping (and/or electromigration) and the defects responsible for the sub-$\mu $s fast-switching. Creation/removal of the defects with more severe lattice-distortions and spatial spreading (trapping potential $\ge $ 0.35 eV), therefore, should be the dominating mechanism during sub-$\mu $s switching. On the other hand, the shallow defects (trapping potential $<<$ 0.2eV) associated with doping/annealing are most likely responsible for the resistance hysteresis (slow switch) during quasistatic voltage sweep.

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Authors

  • Nilanjan Das

    • University of Houston

  • Stephen Tsui

    • University of Houston

  • Ya-Qi Wang

    • University of Houston

  • Yu-Yi Xue

    • University of Houston
    • TCSUH and Department of Physics, University of Houston, Houston, Texas 77204, USA

  • Ching-Wu Chu

    • University of Houston
    • TCSUH and Department of Physics, University of Houston, Houston, Texas 77204-5002, USA
    • Dept. of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX 77204-5002
    • Texas Center for Superconductivity at the University of Houston; Lawrence Berkeley National Laboratory; Hong Kong University of Science and Technology
    • TCSUH and Department of Physics, University of Houston, Houston, Texas 77204, USA;