Doping effect of electrode on Graphene

Graphene as a carrier tunable transport media has drawn a lot of interest since its discovery. It has recently been reported that invasive electrode contacts cause electron-hole asymmetry [1] which will affect the transport properties. To study this effect, we developed an in-situ measurement system that combines Molecular Beam Epitaxy (MBE) with transport measurement. Fine control of the material deposition rate allows us to study the doping effect on graphene at the early stages of electrode formation. [1] B. Huard et al., PRB. \textbf{78}. 121402(R), 2008