Determination of the Crystallographic Orientation of Graphene by Raman Spectroscopy

ORAL

Abstract

We present a systematic study of the Raman spectra of the G band in graphene monolayers under tunable uniaxial tensile stress. The G band splits into two distinct sub-bands (G$^{+}$, G$^{-})$ because of the strain-induced symmetry breaking. Raman scattering from the G$^{+}$ and G$^{-}$ bands shows a distinctive polarization dependence that reflects the angle between the axis of the stress and the underlying graphene crystal axes. Polarized Raman spectroscopy therefore constitutes a purely optical method for the determination of the crystallographic orientation of graphene.

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Authors

  • Mingyuan Huang

    • Department of Mechanical Engineering, Columbia University

  • Hugen Yan

    • Department of Physics and Electrical Engineering, Columbia University
    • Columbia University, New York, NY 10027
    • Columbia University

  • Changyao Chen

    • Department of Mechanical Engineering, Columbia University
    • Columbia University

  • Daohua Song

    • Department of Physics and Electrical Engineering, Columbia University

  • Tony F. Heinz

    • Columbia University
    • Department of Physics and Electrical Engineering, Columbia University
    • Columbia U., New York, NY 10027
    • Columbia University, New York, NY 10027

  • James Hone

    • Department of Mechanical Engineering, Columbia University
    • Columbia University