Metal-semiconductor transitions (MST) at low temperatures were studied for (0001)-oriented Zn$_{1-x}$Al$_{x}$O thin films deposited by simultaneous RF magnetron sputtering of ZnO and Al onto (11-20)-oriented Al$_{2}$O$_{3}$ substrates. The MST occurs at 190K, 102K and 260K for x=2{\%}, 3{\%} and 10{\%} of Al-doping, respectively. The samples display negative magnetoresistance at low temperatures with zero-field electrical resistivity being as low as 3.3 $\times$ 10$^{-4} \quad \Omega $-cm for x=3{\%}. The charge scattering mechanisms below the MST will be discussed in light of weak localization and coulomb interactions due to disorder in the system. *Also with Dept of Physics, NSYSU, Taiwan.
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Authors
Priya.V Chinta*
Department of Physics and Texas Center for Superconductivity, University of Houston,TX
Q.Y. Chen*
Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX
Department of Physics and Texas Center for Superconductivity, University of Houston,TX
O. Lozano*
Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX
Department of Physics and Texas Center for Superconductivity, University of Houston,TX
P.V. Wadekar
Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX
Department of Physics and Texas Center for Superconductivity, University of Houston,TX
Department. of Physics \& Texas Center for Superconductivity, University of Houston, Texas, 77204, USA
W.K. Chu
Department of Physics and Texas Center for Superconductivity, University of Houston, Houston, TX
Department of Physics and Texas Center for Superconductivity, University of Houston,TX
S.W. Yeh
Department of Materials and Optoelectronic Sciences and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan
Center for Nanoscience and Nanotechnology and Dept of Materials and Optoelectronic Engg, National Sun Yat-Sen University (NSYSU), Kaohsiung, Taiwan
N.J. Ho
Department of Materials and Optoelectronic Sciences and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan
Center for Nanoscience and Nanotechnology and Dept of Materials and Optoelectronic Engg, National Sun Yat-Sen University (NSYSU), Kaohsiung, Taiwan
L.W. Tu
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Yung-Hsi Chang
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
Wen-Yuan Pang
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
Ikai Lo
Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
H.W. Seo
Department of Physics, University of Arkansas, Little Rock, AR
