Lower Critical Fields and the Anisotropy in PrFeAsO$_{1-y}$ Single Crystals

ORAL

Abstract

By utilizing miniature Hall-sensor array, we evaluated the lower critical fields $H_{c1}$ in Fe-based oxipnictide PrFeAsO$_{1-y}$ single crystals for {\boldmath $H$}$\parallel c$ and {\boldmath $H$}$\parallel ab$-planes. The temperature dependence of $H_{c1}$ for {\boldmath $H$}$\parallel c$ is well scaled by the in-plane penetration depth and is consistent with a full-gap superconducting state. The anisotropy of penetration depths at low temperatures is estimated to be $\simeq$ 3, which is much smaller than that of coherence lengths. This indicates the multiband superconductivity, in which the active band for the superconductivity is more anisotropic.

Authors

  • Ryuji Okazaki

    • Department of Physics, Kyoto University
    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Marcin Konczykowski

    • Laboratorie des Solides Irradies, Ecole Polytechnique, 91128, Palaiseau, France
  • C.J. van der Beek

    • Laboratorie des Solides Irradies, Ecole Polytechnique, 91128, Palaiseau, France
  • Tomonari Kato

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Ken-ichiro Hashimoto

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Masaaki Shimozawa

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Hiroaki Shishido

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Minoru Yamashita

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Takasada Shibauchi

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan
  • Motoyuki Ishikado

    • Quantum Beam Science Directorate, JAEA, Tokai, Naka, Ibaraki 319-1195, Japan
  • Shin-ichi Shamoto

    • Quantum Beam Science Directorate, JAEA, Tokai, Naka, Ibaraki 319-1195, Japan
  • Hijiri Kito

    • Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568
  • Akira Iyo

    • Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568
  • Hiroshi Eisaki

    • Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568
  • Yuji Matsuda

    • Department of Physics, Kyoto University, Kyoto 606-8502, Japan, Laboratorie des Solides Irradies, Ecole Polytechnique, 91128, Palaiseau, France