Magnetic Oscillations in Scanning Tunneling Spectroscopy of Epitaxial Graphene on SiC

ORAL

Abstract

Scanning tunneling microscopy (STM) and spectroscopy (STS) at a temperature of 4 K are used to study the electronic properties of epitaxial graphene on SiC in a magnetic field perpendicular to the graphene plane. While changing the magnetic field we observe Shubnikov de Haas-like magnetic oscillations in the tunneling conductance, dI/dV. The peak positions of these tunneling magnetic oscillations (TMO) vary periodically with inverse magnetic field, indicating they sample a constant cross-section of the graphene k-space. This new magnetic oscillation method can map extended parts of the electronic band structure of graphene as we vary the tunneling energy in the dI/dV measurement. This is in contrast to traditional magnetic oscillations which typically only probe the Fermi level. This work was supported in part by NSF, NRI-INDEX, and the W. M. Keck Foundation.

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Authors

  • Kevin D. Kubista

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology, Atlanta, GA

  • David L. Miller

    • Georgia Institute of Technology
    • School of Physics, Georgia Institute of Technology, Atlanta, GA

  • Gregory M. Rutter

    • Georgia Institute of Technology

  • Ming Ruan

    • Georgia Institute of Technology

  • Walt A. de Heer

    • Georgia Institute of Technology

  • Phillip First

    • Georgia Institute of Technology

  • Joseph Stroscio

    • Center for Nanoscale Science and Technology, NIST
    • CNST, National Institute of Science and Technology, Gaithersburg, MD 20899
    • Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD
    • Center for Nanoscale in Science and Technology, NIST, Gaithersburg, MD