Infrared probe of Ga$_{1-x}$Mn$_{x}$As films with controlled disorder and compensation
ORAL
Abstract
Arsenic antisite defects (As$_{Ga})$ formed due to low temperature growth conditions are a leading cause of disorder and compensation in Ga$_{1-x}$Mn$_{x}$As. Samples grown with gradient As:Ga growth condition for 0.005$<$x$<$ 0.16 have allowed for optimized As flux minimizing As$_{Ga}$. By studying samples at this optimized location via infrared spectroscopy, a new level of precision can be attained in exploring the electronic structure and other intrinsic properties of Ga$_{1-x}$Mn$_{x}$As samples. Using optical sum rule analysis of our experimentally determined optical conductivity ($\sigma _{1}(\omega ))$, we extract the free carrier band mass (m*) and find it to be several m$_{e}$. We also comment on the levels of interstitial Mn (Mn$_{i})$, finding for x $>$ 0.03 roughly 25{\%} of Mn resides at an interstitial location. Additionally, by probing positions along the As:Ga gradient we directly measure the effects of disorder and compensation on these samples. Systematic changes in $\sigma _{1}(\omega )$ as As$_{Ga}$ content is increased are reported, and the consequences of this on our understanding of the electronic structure of Ga$_{1-x}$Mn$_{x}$As are discussed.
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