Electrical characterization of MOVPE-grown InSb nanowires

In bulk, InSb is a narrow band gap (E$_{g}$ = 170 meV) semiconductor with high electron mobility ($\mu _{n}$ = 77~000 cm$^{2}$/Vs) and is therefore of relevance for low power and high speed transistor applications. It also has a low electron effective mass (0.015m$_{e})$ and a very high electron g-factor $\vert $g$\vert $=51 which is of interest for studies of quantum and spin physics. InSb nanowires were grown by MOVPE from 40 nm Au aerosol seed particles deposited on a $<$111$>$B InAs substrate, where the growth was initiated by a 100 nm InAs segment. The InSb nanowires are untapered and free from stacking faults. The grown InSb nanowires were transferred to degenerately doped, SiO$_{2}$ capped, Si substrates. After locating the wires, Ti/Au contacts were made by electron beam lithography. Electrical measurements of the fabricated InSb nanowire devices were performed in the high bias, field-effect transistor (FET) regime at temperatures ranging from 300 K to 4.2 K as well as in the low bias, single-electron transistor (SET) regime at temperatures ranging from 4.2 K to 300 mK. In particular, effective electron g-factors and Kondo physics have been studied at low temperatures with the nanowire devices.