Effect of N to In flux ratio on the InN surface morphologies grown on single crystal ZnO (000$\overline 1 )$ substrate by plasma-assisted molecular beam epitaxy

POSTER

Abstract

The surface morphology of InN epitaxial films grown on ZnO (000$\overline 1 )$ substrate by plasma-assisted molecular beam epitaxy has beam investigated. We found that the evolution of InN surface morphology was sensitive to the N/In flux ratio. With N/In flux ratio decreasing, the growth mode was changing from 3D to 2D growth. In addition, we found that In$_{2}$O$_{3}$ layer was formed at the interface between InN and ZnO when the N/In flux ratio was lower than 32 by the observation of XRD and TEM.

*The project is supported by National Research Council of Taiwan (NRC 95-2112-M-110-017-MY3) and by AFOSR/AOARD (AFMC, USAF) under grant number FA4869-07-1-4022.

Authors

  • Cheng-Hung Shih

    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
  • Ikai Lo

    • Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
    • Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
  • Wen-Yuan Pang

    • Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China
    • Center for Nanoscience and Nanotechnology and Dept of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
    • Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C.
    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, Republic of China
  • Shih-Hung Chuang

    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
  • Chia-Hsuan Hu

    • Department of physics, National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
  • Chia-Ho Hsieh

    • Institute of Material Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan,
    • Institute of Material Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.