Effect of N to In flux ratio on the InN surface morphologies grown on single crystal ZnO (000$\overline 1 )$ substrate by plasma-assisted molecular beam epitaxy
POSTER
Abstract
The surface morphology of InN epitaxial films grown on ZnO (000$\overline 1 )$ substrate by plasma-assisted molecular beam epitaxy has beam investigated. We found that the evolution of InN surface morphology was sensitive to the N/In flux ratio. With N/In flux ratio decreasing, the growth mode was changing from 3D to 2D growth. In addition, we found that In$_{2}$O$_{3}$ layer was formed at the interface between InN and ZnO when the N/In flux ratio was lower than 32 by the observation of XRD and TEM.
*The project is supported by National Research Council of Taiwan (NRC 95-2112-M-110-017-MY3) and by AFOSR/AOARD (AFMC, USAF) under grant number FA4869-07-1-4022.