Engineering the interlayer exchange coupling in hybrid ferromagnetic metal/semiconductor heterostructures
ORAL
Abstract
The systematic engineering of exchange coupling in ferromagnetic semiconductor heterostructures is important for developing proof-of-concept spin transfer semiconductor devices. We recently demonstrated interlayer exchange coupling between a ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$As) and a ferromagnetic metal (MnAs) [APL {\bf 91}, 192503 (2007)]. Here, we report a comprehensive magnetometry study of the underlying exchange coupling in this hybrid system. We vary key parameters such as the thicknesses of both the ferromagnetic layers and the composition of the Ga$_{1-x}$Mn$_x$As layer, and explain our observations using an ``exchange spring'' model. We also demonstrate the propagation of the exchange coupling through a non-magnetic spacer layer (p-doped GaAs) and examine the variation of this coupling as a function of the spacer layer thickness and doping. Work supported by the ONR MURI program and by NSF.
–