Experimental studies of the transport in graphene in a parallel magnetic field at low temperatures

ORAL

Abstract

Graphene has remarkable electric properties, and it is also a very promising material for spintronic applications. Most previous experiments, however, were focused on studying graphene devices in perpendicular magnetic field, which quantizes the real-space motion of Dirac electrons in graphene and leads to an unusual quantum Hall effect. Here we will present the results of experimental studies of electric transport in single- and few-layer graphene devices in parallel magnetic field and at low temperatures. The Dirac-point resistance of our graphene devices~was studied as a function of magnetic field and temperature. The effect of tuning the chemical potential under different magnetic fields was also investigated and will be discussed.

*This work was supported by the US Department of Energy, and Purdue University.

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Authors

  • Liyuan Zhang

    • Department of Physics and Birck Nanotechnology Center, Purdue University
    • Brookhaven National Laboratory

  • J. Camacho

    • Brookhaven National Laboratory

  • Helin Cao

    • Department of Physics and Birck Nanotechnology Center, Purdue University
    • Purdue University

  • Isaac Childres

    • Purdue University

  • Y.P. Chen

    • Purdue University
    • Department of Physics and Birck Nanotechnology Center, Purdue University
    • Department of physics, School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907
    • NHMFL/FSU; Princeton EE

  • Alexei Tsvelik

    • Brookhaven National Laboratory

  • Dmitri Kharzeev

    • Brookhaven National Laboratory

  • Maxim Khodas

    • Brookhaven National Laboratory

  • Myron Strongin

    • Brookhaven National Laboratory

  • T. Valla

    • Brookhaven National Laboratory

  • Igor Zaliznyak

    • CMPMSD, Brookhaven National Laboratory
    • Brookhaven National Laboratory