Flexible Solution-Processed TiO2-Based Memory

We have fabricated flexible titanium dioxide memory devices using a room temperature spin-on titanium dioxide (TiO2) sol gel technique. These devices show a non-volatile memory behavior with on/off ratios up to 10,000:1 and can be switched between low and high current states by applying an adequate bias (less than 10 V). Once switched, the state can be read by applying a small bias (0.5 V). The device can then be set back to the previous current state by applying a bias that is equal in magnitude but opposite in polarity to the initial bias. Devices maintain on/off ratios greater than four orders of magnitude when flexed 4,000 times, still switch after being flexed 8,000 times, and hold their set state for longer than 1x10\^{}6 seconds. The advantages of our devices include that they are low power, rewritable, nonvolatile, lightweight, physically flexible, and they have a simple, inexpensive, two-terminal, room temperature processed device design.