Si and Ge Nanowires: Electrical Transport and Simulation

Presentations

• Epitaxial growth of Ge-Si$_{x}$Ge$_{1-x}$ core-shell nanowire heterostructures with tunable shell content

  ORAL

  March 17, 2009, 11:15 AM – March 17, 2009, 11:27 AM

  Authors

  • Kamran Varahramyan

    • The University of Texas at Austin

  • Domingo Ferrer

    • The University of Texas at Austin

  • Emanuel Tutuc

    • The University of Texas at Austin

  • Sanjay Banerjee

    • The University of Texas at Austin

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• The Effects of Strain and Quantum Confinement on the Electronic Properties of Germanium Nanowires

  ORAL

  March 17, 2009, 11:27 AM – March 17, 2009, 11:39 AM

  Authors

  • Paul Logan

    • Arizona State Univeristy

  • Xihong Peng

    • Arizona State University

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• Atomic scale structure of Si nanowire

  ORAL

  March 17, 2009, 11:39 AM – March 17, 2009, 11:51 AM

  Authors

  • Tao Xu

    • Institut d'Electronique, de Microelectronique et de Nanotechnologie

  • Jean Philippe Nys

    • Institut d'Electronique, de Microelectronique et de Nanotechnologie

  • Maxime Berthe

    • Institut d'Electronique, de Microelectronique et de Nanotechnologie

  • Bruno Grandidier

    • Institut d'Electronique, de Microelectronique et de Nanotechnologie

  • Didier Stievenard

    • Institut d'Electronique, de Microelectronique et de Nanotechnologie

  • Wanghua Chen

    • University and INSA of Rouen

  • Rodrigue Larde

    • University and INSA of Rouen

  • Emmanuel Cadel

    • University and INSA of Rouen

  • Philippe Pareige

    • University and INSA of Rouen

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• Structural and Electronic Properties of Boron Doped Multiply Twinned Silicon Nanowires

  ORAL

  March 17, 2009, 11:51 AM – March 17, 2009, 12:03 PM

  Authors

  • C.S. Jayanthi

    • University of Louisville

  • P. Tandy

    • University of Louisville

  • M. Yu

    • University of Louisville

  • S.Y. Wu

    • University of Louisville

  • Y. Zhao

    • NREL

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• Nanometer-resolution studies of ``end-on'' metal contacts to vertical Si nanowires

  ORAL

  March 17, 2009, 12:03 PM – March 17, 2009, 12:15 PM

  Authors

  • W. Cai

    • The Ohio State Univ.

  • Y.L. Che

    • The Ohio State Univ.

  • J.P. Pelz

    • The Ohio State Univ.

  • E. Hemesath

    • Northwestern Univ.

  • L.J. Lauhon

    • Northwestern Univ.

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• First-Principles Simulations of Silicon Nanowires with Different Surface Passivations

  ORAL

  March 17, 2009, 12:15 PM – March 17, 2009, 12:27 PM

  Authors

  • Junwen Li

    • Department of Physics, Oklahoma State University
    • Oklahoma State University

  • John W. Mintmire

    • Department of Physics, Oklahoma State University
    • Oklahoma State University

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• Study of Electronic Charge Distribution in Silicon Nanowire Transistors : An Atomistic Approach

  ORAL

  March 17, 2009, 12:27 PM – March 17, 2009, 12:39 PM

  Authors

  • Abhijeet Paul

    • Purdue University

  • Saumitra Mehrotra

    • Purdue University

  • Gerhard Klimeck

    • Purdue University
    • NCN Purdue University West Lafayette IN

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• Interface State Disorder Dominated Microwave Conductance in Silicon Nanowires

  ORAL

  March 17, 2009, 12:39 PM – March 17, 2009, 12:51 PM

  Authors

  • Clark Highstrete

    • Sandia National Laboratories

  • Mark Lee

    • Sandia National Laboratories

  • David H. Dunlap

    • University of New Mexico

  • Aaron L. Vallett

    • The Pennsylvania State University

  • Sarah M. Eichfeld

    • The Pennsylvania State University

  • Joan M. Redwing

    • The Pennsylvania State University

  • Theresa S. Mayer

    • The Pennsylvania State University

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• Effect of hydrogen passivation on the structure and energetics of silicon nanowires

  ORAL

  March 17, 2009, 12:51 PM – March 17, 2009, 1:03 PM

  Authors

  • Abraham Ahmiel

  • Yongqiang Xue

    • SUNY Albany

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• Semiconducting nanowire devices in out-of-plane geometry.

  ORAL

  March 17, 2009, 1:03 PM – March 17, 2009, 1:15 PM

  Authors

  • Pradeep Manandhar

    • Center for Integrated Nanotechnologies, Los Alamos National Laboratory

  • Samuel T. Picraux

    • Center for Integrated Nanotechnologies, Los Alamos National Laboratory

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• Top-gate Ge-Si$_{x}$Ge$_{1-x}$ core-shell nanowire field effect transistors with highly doped source and drain.

  ORAL

  March 17, 2009, 1:15 PM – March 17, 2009, 1:27 PM

  Authors

  • Junghyo Nah

  • E.-S. Liu

  • D. Shahrjerdi

  • K. M. Varahramyan

  • S. K. Banerjee

  • E. Tutuc

    • University of Texas at Austin

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• Precision transport and assembling of nanowires in suspension by electric fields

  ORAL

  March 17, 2009, 1:27 PM – March 17, 2009, 1:39 PM

  Authors

  • D. L. Fan

    • Johns Hopkins University

  • Robert Cammarata

    • Johns Hopkins Unviersity
    • Johns Hopkins University

  • C.L. Chien

    • Department of Physics and Astronomy, Johns Hopkins University
    • Johns Hopkins Univ.
    • Johns Hopkins University
    • JHU
    • The Johns Hopkins University

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• Thermal properties measurements of silicon nanowires at low temperature

  ORAL

  March 17, 2009, 1:39 PM – March 17, 2009, 1:51 PM

  Authors

  • Heron Jean-Savin

    • Neel Institut, CNRS, Grenoble, France

  • Fournier Thierry

    • Neel Institut, CNRS, Grenoble, France

  • Bourgeois Olivier

    • Neel Institut, CNRS, Grenoble, France

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• ABSTRACT WITHDRAWN

  March 17, 2009, 1:51 PM – March 17, 2009, 2:03 PM

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• Donor-pair defects and doping efficiency in silicon nanowires

  ORAL

  March 17, 2009, 2:03 PM – March 17, 2009, 2:15 PM

  Authors

  • Byungki Ryu

    • Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 305-701

  • Chang-Youn Moon

    • Department of Physics and IPAP, Yonsei University, Seoul 120-749

  • Woo-Jin Lee

    • Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 305-701

  • Kee Joo Chang

    • Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
    • Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 305-701
    • Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701

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