Focus Sessions: Dopants and Defects in Semiconductors II
FOCUS · J21 ·
Presentations
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Defects in Mg doped (Al,In)GaN thin films and nanostructures
COFFEE_KLATCH · Invited
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Authors
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Fatemeh Shahedipour-Sandvik
- UAlbany-State University of New York
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Interaction of hydrogen with defects in GaN
ORAL
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Authors
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Yevgeniy Puzyrev
- Vanderbilt University
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M.J. Beck
- Department of Physics and Astronomy, Vanderbilt University
- Vanderbilt University
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Blair Tuttle
- Penn State Erie
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Ron Schrimpf
- Vanderbilt University
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Dan Fleetwood
- Vanderbilt University
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Sokrates T. Pantelides
- Department of Physics and Astronomy, Vanderbilt University
- Vanderbilt University
- Vanderbilt University, Oak Ridge National Laboratory
- Vanderbilt University and Oak Ridge National Laboratory
- Vanderbilt Univ.
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Intrinsic spin polarization of cation vacancies in group-III nitrides
ORAL
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Authors
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Yoshihiro Gohda
- Department of Physics, The University of Tokyo, 113-0033, Japan
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Atsushi Oshiyama
- Department of Applied Physics, The University of Tokyo, 113-8656, Japan
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N-H$_{n}$ complexes in GaAsN:H containing more than two H atoms
ORAL
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Authors
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Lanlin Wen
- Lehigh University
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Michael Stavola
- Lehigh University
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W. Beall Fowler
- Lehigh University
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Antonio Polimeni
- University of Rome
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Mario Capizzi
- University of Rome
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Gabriele Bisognin
- University of Padova
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Marina Berti
- University of Padova
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N-H vibrational frequencies in GaAs:N:H$_{n}$
ORAL
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Authors
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W. Beall Fowler
- Lehigh University
- Lehigh University, Bethlehem PA
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M. Stavola
- Lehigh University
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Lanlin Wen
- Lehigh University
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A. Polimeni
- University of Rome
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M. Capizzi
- University of Rome
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Effects of Si-N complexes on the electronic properties of GaAsN
ORAL
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Authors
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Yu Jin
- Physics Dept., Univ. of Michigan
- University of Michigan
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Ryan Jock
- University of Michigan
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Hailing Cheng
- Physics Dept., Univ. of Michigan
- University of Michigan
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Cagliyan Kurdak
- University of Michigan
- Physics Dept., Univ. of Michigan
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Rachel Goldman
- Dept. of Materials Science and Engineering, Univ. of Michigan
- University of Michigan
- University of Michgan
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Influence of N Interstitials on the electronic properties of GaAsN Alloys
ORAL
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Authors
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Ryan Jock
- University of Michigan
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Yu Jin
- Physics Dept., Univ. of Michigan
- University of Michigan
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Hailing Cheng
- Physics Dept., Univ. of Michigan
- University of Michigan
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Cagliyan Kurdak
- University of Michigan
- Physics Dept., Univ. of Michigan
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Rachel Goldman
- Dept. of Materials Science and Engineering, Univ. of Michigan
- University of Michigan
- University of Michgan
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Quaternary Ga$_{1-x}$In$_{x}$P$_{1-y}$N$_{y}$ alloys described by clustering of In and N in GaP
ORAL
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Authors
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Koushik Biswas
- National Renewable Energy Laboratory, Golden, CO
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Alberto Franceschetti
- National Renewable Energy Laboratory, Golden, CO
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Stephan Lany
- National Renewable Energy Laboratory, Golden, CO
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Mechanism of Interaction between Hydrogen and the Two-dimensional Electron Gas in AlGaN/GaN High Electron Mobility Transistors
ORAL
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Authors
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Jason Gu
- Carnegie Mellon University
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Mahak Khandelwal
- Carnegie Mellon University
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Jacob Melby
- Carnegie Mellon
- Carnegie Mellon University
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Michael Steeves
- University of Maine
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Yuh-Renn Wu
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University
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Robert Lad
- University of Maine
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Robert F. Davis
- Carnegie Mellon University
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Magnetodielectric coupling in Au/GaAs:Si Schottky barriers
ORAL
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Authors
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S. Tongay
- University of Florida
- Department of Physics, University of Florida, Gainesville, FL 32611
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A.F. Hebard
- University of Florida, Gainesville, FL-32611, USA
- University of Florida
- Department of Physics, University of Florida, Gainesville, FL 32611
- University of Florida, Department of Physics
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Y. Hikita
- The University of Tokyo
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Harold Hwang
- The University of Tokyo
- University of Tokyo and Japan Science and Technology Agency
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Point Defects and Dielectric Loss at MM Wavelengths in Wide-Gap Semiconductors
ORAL
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Authors
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Jyotsna Dutta
- North Carolina Central University
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Charles Jones
- North Carolina Central University
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V.V. Parshin
- Applied Physics Institute, RAS
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B. Garin
- Inst. of Radio Engineering and Electronics, RAS
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V.I. Polyakov
- Inst. of Radio Engineering and Electronics, RAS
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A. Rukovishnikov
- Inst. of Radio Engineering and Electronics, RAS
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Dual-Surfactant effect on enhancing different p-type doping in GaP.
ORAL
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Authors
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Junyi Zhu
- university of utah
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Gerald Stringfellow
- university of utah
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Feng Liu
- University of Utah
- Department of Material Science and Engineering, University of Utah, Salt Lake City, Utah, 84112
- university of utah
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InSb epilayers and quantum wells grown on Ge(001) substrates by MBE
ORAL
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Authors
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Mukul Debnath
- University of Oklahoma
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Tetsuya Mishima
- University Of Oklahoma
- University of Oklahoma
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Mike Santos
- University Of Oklahoma
- University of Oklahoma
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Khalid Hossain
- Amethyst Research Inc.
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Wayne Holland
- Amethyst Research Inc.
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