Diffraction Symmetries in Epitaxially-Grown Graphene and the SiC Substrate

ORAL

Abstract

Diffraction patterns in epitaxially-grown graphene and the SiC substrate are studied by observing dark field low energy electron microscopy (LEEM) and low energy electron diffraction (LEED) images. The breaking of 6-fold symmetry is mapped out as a function of the position on the sample for different crystal periodicities. Such observations provide information about the stacking and domain boundaries in epitaxially-grown graphene.

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Authors

  • David Siegel

    • UC Berkeley Physics / LBNL Materials Sciences

  • Shuyun Zhou

    • LBNL Materials Sciences

  • Farid El Gabaly

    • Sandia National Laboratory

  • Andreas Schmid

    • Lawrence Berkeley National Laboratory

  • Kevin McCarty

    • Sandia National Laboratories
    • Sandia National Laboratory

  • Alessandra Lanzara

    • UC Berkeley Physics / LBNL Materials Sciences