Electronic transport properties of graphene irradiated by charged particles
ORAL
Abstract
We have measured the effect of low energy charged particle irradiation (electrons, He ions, Ne ions or Ar ions) on the electronic transport properties of clean graphene devices on SiO$_{2}$. Charged particle irradiation induces additional scattering which is consistent with adding both short-ranged (i.e. point defect) and long-ranged (i.e. charged) impurities to the device. We also performed temperature-dependent conductivity of the irradiated devices from 9K to 400K in ultra high vacuum. In sharp contrast to graphene with charged impurity disorder, which remains metallic at low temperature, even a small amount of irradiation-induced disorder (one order of magnitude increase in room-temperature resistivity compared to pristine devices) produces a divergence of the resistivity and insulating behavior at low temperature for carrier densities below 4*10$^{12}$cm$^{-2}$.
*This work was supported by the University of Maryland MRSEC and the Nanoelectronics Research Initiative of the Semiconductor Research Corporation.
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Authors
Jian-Hao Chen
University of Maryland, College Park
Department of Physics and University of Maryland Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
Dept of Physics, Center for Nanophysics and Advanced Materials, and Materials Research Science and Engineering Center, Univ. of Maryland, College Park
University of Maryland
Department of Physics, University of Maryland
Materials Research Science and Engineering Center, Center for Nanophysics and Advanced Materials, Dept of Physics, Univ. of Maryland, College Park, MD
William G. Cullen
University of Maryland
Physics Department, University of Maryland, College Park, MD 20742
Materials Research Science and Engineering Center, Center for Nanophysics and Advanced Materials, Dept of Physics, Univ. of Maryland, College Park, MD
University of Maryland College Park
Dept. of Physics, U. of Maryland - College Park
Chaun Jang
Materials Research Science and Engineering Center, Center for Nanophysics and Advanced Materials, Dept of Physics, Univ. of Maryland, College Park, MD
Michael Fuhrer
University of Maryland
Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland College Park
Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742, USA
Materials Research Science and Engineering Center, Center for Nanophysics and Advanced Materials, Dept of Physics, Univ. of Maryland, College Park, MD
Materials Research Science and Engineering Center and Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland
Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA
Ellen Williams
University of Maryland, College Park
Department of Physics and University of Maryland Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742
University of Maryland
LPS, CNAM, and the DOP, UM
Physics Department, University of Maryland, College Park, MD 20742
Materials Research Science and Engineering Center, Center for Nanophysics and Advanced Materials, Dept of Physics, Univ. of Maryland, College Park, MD
University of Maryland College Park
Dept. of Physics, U. of Maryland - College Park
Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, MD 20742-4111, USA