Generation and transport of photo-excited carriers in diamond

ORAL

Abstract

Photo-excited carrier transport in diamond has generated substantial interest in the past few years. The combination of high thermal conductivity, large band-gap, and large dielectric breakdown make diamond attractive in optoelectronic, high-power and high-frequency applications. Here we present measurements of electrical conduction by sub-band gap photo-excited carriers between metallic gates lithographically patterned on the surface of single-crystal type Ib diamond. The time-dependent charging and discharging photo-currents follow a ``stretched exponential'' form, which results from a trap state conduction mechanism mitigated by a local space charge. We also perform photo-excited magneto-transport as well as energy-dependant photo-conduction measurements to investigate the detailed origins of this sub-gap photo-excited conduction.

*This work was supported by AFOSR and ARO.

Authors

  • F.J. Heremans

    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
  • G.D. Fuchs

    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA
  • C.F. Wang

    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
  • D.D. Awschalom

    • University of California, Santa Barbara
    • University of California Santa Barbara
    • UCSB
    • Dept. of Physics, University of California, Santa Barbara CA 93106
    • Department of Physics, University of California, Santa Barbara, California 93106, USA
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
    • Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California
  • Ronald Hanson

    • Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands