Generation and transport of photo-excited carriers in diamond
ORAL
Abstract
Photo-excited carrier transport in diamond has generated substantial interest in the past few years. The combination of high thermal conductivity, large band-gap, and large dielectric breakdown make diamond attractive in optoelectronic, high-power and high-frequency applications. Here we present measurements of electrical conduction by sub-band gap photo-excited carriers between metallic gates lithographically patterned on the surface of single-crystal type Ib diamond. The time-dependent charging and discharging photo-currents follow a ``stretched exponential'' form, which results from a trap state conduction mechanism mitigated by a local space charge. We also perform photo-excited magneto-transport as well as energy-dependant photo-conduction measurements to investigate the detailed origins of this sub-gap photo-excited conduction.
*This work was supported by AFOSR and ARO.
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Authors
F.J. Heremans
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
G.D. Fuchs
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA
C.F. Wang
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
D.D. Awschalom
University of California, Santa Barbara
University of California Santa Barbara
UCSB
Dept. of Physics, University of California, Santa Barbara CA 93106
Department of Physics, University of California, Santa Barbara, California 93106, USA
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, 93106
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California
Ronald Hanson
Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands