Indirect Optical Injection of Carriers and Spin in Silicon

ORAL

Abstract

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. Optical injection of spins in silicon is potentially important for spintronics applications. We theoretically investigate one- and two-photon indirect absorption in silicon, using a pseudopotential description of energy band and the adiabatic bond charge model to describe phonon dispersion and polarization. Spin injection is calculated as well. We compare our results with experiments.

*This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC).

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Authors

  • JinLuo Cheng

    • Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China

  • Julien Rioux

    • Department of Physics and Institute for Optical Sciences, University of Toronto

  • John Sipe

    • Department of Physics and Institute for Optical Sciences, University of Toronto